Sonochemical synthesis of hydrogenated amorphous silicon nanoparticles from liquid trisilane at ambient temperature and pressure
被引:13
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作者:
Bedini, Andrew P. Cadiz
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Julich Res Ctr, IEK Photovolta 5, Wilhelm Johnen Str, D-52425 Julich, GermanyJulich Res Ctr, IEK Photovolta 5, Wilhelm Johnen Str, D-52425 Julich, Germany
Bedini, Andrew P. Cadiz
[1
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Klingebiel, Benjamin
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Julich Res Ctr, IEK Photovolta 5, Wilhelm Johnen Str, D-52425 Julich, GermanyJulich Res Ctr, IEK Photovolta 5, Wilhelm Johnen Str, D-52425 Julich, Germany
Klingebiel, Benjamin
[1
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Luysberg, Martina
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Julich Res Ctr, PGI Microstruct Res 5, Wilhelm Johnen Str, D-52425 Julich, Germany
Julich Res Ctr, Ernst Ruska Ctr Microscopy & Spect Electrons, Wilhelm Johnen Str, D-52425 Julich, GermanyJulich Res Ctr, IEK Photovolta 5, Wilhelm Johnen Str, D-52425 Julich, Germany
Luysberg, Martina
[2
,3
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Carius, Reinhard
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Julich Res Ctr, IEK Photovolta 5, Wilhelm Johnen Str, D-52425 Julich, GermanyJulich Res Ctr, IEK Photovolta 5, Wilhelm Johnen Str, D-52425 Julich, Germany
Carius, Reinhard
[1
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机构:
[1] Julich Res Ctr, IEK Photovolta 5, Wilhelm Johnen Str, D-52425 Julich, Germany
[2] Julich Res Ctr, PGI Microstruct Res 5, Wilhelm Johnen Str, D-52425 Julich, Germany
[3] Julich Res Ctr, Ernst Ruska Ctr Microscopy & Spect Electrons, Wilhelm Johnen Str, D-52425 Julich, Germany
Silicon nanoparticles (Si -NPs) are increasing in relevance in diverse fields of scientific and nanotechnological inquiry, where currently some of the most important areas of research involve energy storage and biomedical applications. The present article is concerned with a curious and scalable method for the preparation of discrete, unoxidized, hydrogenated, and amorphous Si -NPs of tunable size in the range of 1.5-50 nm. Using ultrasound generated with a conventional ultrasonic horn, the "fusion" of Si -NPs is demonstrated at ambient temperature and pressure by sonicating solutions containing readily available, semiconductor-grade purity trisilane (Si3H8). The only requirement for the synthesis is that it be carried out in an inert atmosphere such as that of a N-2-filled glove box. Various spectroscopic techniques and electron microscopy images are used to show that the size of the Si -NPs can be controlled by varying the amplitude of the ultrasonic waves or the concentration of trisilane in the solution. Moreover, sustained ultrasonic irradiation is found to yield highly porous Si-NP agglomerates that may find use in applications requiring non-crystalline nanoscopic high specific surface area morphologies.
机构:
King Faisal Univ, Coll Sci, Dept Chem, POB 380, Al Hufuf 31982, Al Hassa, Saudi Arabia
Sohag Univ, Dept Chem, Fac Sci, Sohag, EgyptKing Faisal Univ, Coll Sci, Dept Chem, POB 380, Al Hufuf 31982, Al Hassa, Saudi Arabia
Abd El-Lateef, Hany M.
Touny, Ahmed H.
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King Faisal Univ, Coll Sci, Dept Chem, POB 380, Al Hufuf 31982, Al Hassa, Saudi Arabia
Helwan Univ, Fac Sci, Dept Chem, Helwan, EgyptKing Faisal Univ, Coll Sci, Dept Chem, POB 380, Al Hufuf 31982, Al Hassa, Saudi Arabia
Touny, Ahmed H.
Saleh, Mahmoud M.
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King Faisal Univ, Coll Sci, Dept Chem, POB 380, Al Hufuf 31982, Al Hassa, Saudi Arabia
Cairo Univ, Fac Sci, Dept Chem, Cairo, EgyptKing Faisal Univ, Coll Sci, Dept Chem, POB 380, Al Hufuf 31982, Al Hassa, Saudi Arabia
机构:
Ecole Polytech, LPICM CNRS, F-91128 Palaiseau, France
TOTAL SA, Gas & Power, R&D Div, F-92400 Courbevoie, FranceEcole Polytech, LPICM CNRS, F-91128 Palaiseau, France
机构:
Slovak Acad Sci, Inst Phys, SK-84511 Bratislava, SlovakiaSlovak Acad Sci, Inst Phys, SK-84511 Bratislava, Slovakia
Gmucova, Katarina
Weis, Martin
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Slovak Univ Technol Bratislava, Fac Elect Engn & Informat Technol, SK-81219 Bratislava, SlovakiaSlovak Acad Sci, Inst Phys, SK-84511 Bratislava, Slovakia
Weis, Martin
Nadazdy, Vojtech
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Slovak Acad Sci, Inst Phys, SK-84511 Bratislava, SlovakiaSlovak Acad Sci, Inst Phys, SK-84511 Bratislava, Slovakia
Nadazdy, Vojtech
Capek, Ignac
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Slovak Acad Sci, Inst Polymer, SK-84236 Bratislava, SlovakiaSlovak Acad Sci, Inst Phys, SK-84511 Bratislava, Slovakia
Capek, Ignac
Satka, Alexander
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Slovak Univ Technol Bratislava, Fac Elect Engn & Informat Technol, SK-81219 Bratislava, Slovakia
Ctr Int Laser, SK-81219 Bratislava, SlovakiaSlovak Acad Sci, Inst Phys, SK-84511 Bratislava, Slovakia
Satka, Alexander
Chitu, Livia
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Slovak Acad Sci, Inst Phys, SK-84511 Bratislava, SlovakiaSlovak Acad Sci, Inst Phys, SK-84511 Bratislava, Slovakia
Chitu, Livia
Cirak, Julius
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Slovak Univ Technol Bratislava, Fac Elect Engn & Informat Technol, SK-81219 Bratislava, SlovakiaSlovak Acad Sci, Inst Phys, SK-84511 Bratislava, Slovakia
Cirak, Julius
Majkova, Eva
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Slovak Acad Sci, Inst Phys, SK-84511 Bratislava, SlovakiaSlovak Acad Sci, Inst Phys, SK-84511 Bratislava, Slovakia