Growth and characterisation of self-assembled cubic GaN quantum dots

被引：21

作者：

Adelmann, C

Guerrero, EM

Chabuel, F

Simon, J

Bataillou, B

Mula, G

Dang, LS

Pelekanos, NT

Daudin, B

Feuillet, G

Mariette, H

机构：

[1] CEA Grenoble, SPMM, Dept Rech Fondamentale Mat Condensee, F-38054 Grenoble 9, France

[2] Univ Grenoble 1, Spectrometrie Phys Lab, F-38042 St Martin Dheres, France

[3] Univ Cagliari, INFM, I-09042 Monserrato, CA, Italy

[4] Univ Cagliari, Dipartimento Fis, I-09042 Monserrato, CA, Italy

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2001年 / 82卷 / 1-3期

关键词：

cubic GaN; Stranski-Krastanow growth; self-assembled quantum dots;

D O I：

10.1016/S0921-5107(00)00763-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Self-assembled cubic GaN quantum dots have been grown by plasma-assisted molecular-beam epitaxy on cubic AIN. Atomic force microscopy and transmission electron microscopy reveal islands of a mean height of 1.6 nm and a mean diameter of 13 nm, The influence of stacking faults on island nucleation is discussed. The quantum dots show ultraviolet photo- and cathodo-luminescence with no thermal quenching up to room temperature. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：212 / 214

页数：3

共 7 条

[1] From visible to white light emission by GaN quantum dots on Si(111) substrate [J].

Damilano, B ;

Grandjean, N ;

Semond, F ;

Massies, J ;

Leroux, M .

APPLIED PHYSICS LETTERS, 1999, 75 (07) :962-964

[2] Stranski-Krastanov growth mode during the molecular beam epitaxy of highly strained GaN [J].

Daudin, B ;

Widmann, F ;

Feuillet, G ;

Samson, Y ;

Arlery, M ;

Rouviere, JL .

PHYSICAL REVIEW B, 1997, 56 (12) :R7069-R7072

[3] Growth mode and kinetics of atmospheric pressure chemical vapour deposition of β-SiC on Si(100) substrate [J].

Ferro, G ;

Vincent, H ;

Monteil, Y ;

Chaussende, D ;

Bouix, J .

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 :227-230

[4] Group III nitride semiconductors for short wavelength light-emitting devices [J].

Orton, JW ;

Foxon, CT .

REPORTS ON PROGRESS IN PHYSICS, 1998, 61 (01) :1-+

[5] Three-dimensional carrier confinement in strain-induced self-assembled quantum dots [J].

Petroff, PM ;

MedeirosRibeiro, G .

MRS BULLETIN, 1996, 21 (04) :50-54

[6] Self-assembling GaN quantum dots on AlxGa1-xN surfaces using a surfactant [J].

Tanaka, S ;

Iwai, S ;

Aoyagi, Y .

APPLIED PHYSICS LETTERS, 1996, 69 (26) :4096-4098

[7] Blue-light emission from GaN self-assembled quantum dots due to giant piezoelectric effect [J].

Widmann, F ;

Simon, J ;

Daudin, B ;

Feuillet, G ;

Rouvière, JL ;

Pelekanos, NT ;

Fishman, G .

PHYSICAL REVIEW B, 1998, 58 (24) :15989-15992

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