Review-The Current and Emerging Applications of the III-Nitrides

被引：74

作者：

Zhou, Chuanle ^{[1
]}

Ghods, Amirhossein ^{[1
]}

Saravade, Vishal G. ^{[1
]}

Patel, Paresh V. ^{[1
]}

Yunghans, Kelcy L. ^{[1
]}

Ferguson, Cameron ^{[1
]}

Feng, Yining ^{[2
]}

Kucukgok, Bahadir ^{[2
]}

Lu, Na ^{[2
]}

Ferguson, Ian T. ^{[1
]}

机构：

[1] Missouri Univ Sci & Technol, Elect & Comp Eng, Rolla, MO 65409 USA

[2] Purdue Univ, Lyles Sch Civil Engn, Sch Mat Engn, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2017年 / 6卷 / 12期

基金：

美国国家科学基金会;

关键词：

LIGHT-EMITTING-DIODES; BAND-GAP; THERMOELECTRIC PROPERTIES; BLUE-LIGHT; FREESTANDING GAN; ENERGY; DEVICES; GROWTH; FILMS; INN;

D O I：

10.1149/2.0101712jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

III-Nitrides are attracting considerable attention as promising materials for a wide variety of applications due to their wide coverage of direct bandgap range, high electron mobility, high thermal stability and many other exceptional properties. The light-emitting diodes based on III-Nitrides revolutionize the solid-state lighting industry. III-Nitrides based solar cells and thermoelectric generators support the sustainable energy progress, and the III-Nitrides are better alternatives for power and radio frequency (RF) electronics compared with silicon. The doped III-Nitrides' magnetic properties and sensitivity to radiation can contribute to novel spintronic and nuclear detection devices. This paper will review III-nitride material properties and their corresponding applications in LEDs, solar cells, power and radio frequency (RF) electronics, magnetic devices, thermoelectrics and nuclear detection. The typical values of electrical, optical, thermoelectric, magnetic properties are cited, the current state of art investigations are reported, and the future applications are estimated. (c) The Author(s) 2017. Published by ECS. All rights reserved.

引用

页码：Q149 / Q156

页数：8

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