Electrostatic modification of oxide semiconductors by electric double layers of microporous SiO2-based solid electrolyte

被引：11

作者：

Jiang, Jie ^{[1
,2
]}

Dai, Minzhi ^{[2
]}

Sun, Jia ^{[1
]}

Zhou, Bin ^{[1
]}

Lu, Aixia ^{[1
]}

Wan, Qing ^{[1
,2
]}

机构：

[1] Hunan Univ, Key Lab Micronano Optoelect Devices, Minist Educ, Changsha 410082, Hunan, Peoples R China

[2] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2011年 / 109卷 / 05期

基金：

中国科学院院长基金特别; 中国国家自然科学基金;

关键词：

THIN-FILM TRANSISTORS; FIELD-EFFECT TRANSISTORS; GEL GATE DIELECTRICS; CARRIER DENSITY; LOW-VOLTAGE; CAPACITANCE; INSULATOR;

D O I：

10.1063/1.3553869

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied electrostatic modulation of InGaZnO4 and indium-tin oxide (ITO) channel by using microporous SiO2-based solid electrolyte as gate dielectrics in the field-effect transistors (FETs) structure. H3PO4-treated SiO2-based solid electrolyte was found to be have a large capacitance (9.5 mu F/cm(2)) due to the strong capacitive coupling by electric double layer(EDL) between H3PO4-treated solid electrolyte and active channel. High carrier densities (>10(14)/cm(2)) and large metallic conductivities (2180 S/cm) in InGaZnO4 channel were electrostatically induced, while a metal-to-insulator transition (more than 6 orders of magnitude of channel resistance modulation) was observed in ITO channel by using such FET structure. Furthermore, device simulation based on an EDL model can also reproduce the transfer characteristics well. Our result provides a new opportunity for electrostatic modulation of the electronic properties in condensed matter. (C) 2011 American Institute of Physics. [doi:10.1063/1.3553869]

引用

页数：6

共 29 条

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