Molecular beam epitaxy as a method for the growth of free-standing bulk zinc-blende GaN and AlGaN crystals

被引：8
作者：
Novikov, S. V. [1 ]
Staddon, C. R. [1 ]
Foxon, C. T. [1 ]
Luckert, F. [2 ]
Edwards, P. R. [2 ]
Martin, R. W. [2 ]
Kent, A. J. [1 ]
机构：
[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England
[2] Univ Strathclyde, Dept Phys, SUPA, Glasgow G4 0NG, Lanark, Scotland
来源：
JOURNAL OF CRYSTAL GROWTH | 2011年 / 323卷 / 01期
基金：
英国工程与自然科学研究理事会;
关键词：
Substrates; Molecular beam epitaxy; Nitrides; Semiconducting III-V materials; VAPOR-PHASE EPITAXY; LAYERS; ALN; MBE;
D O I：
10.1016/j.jcrysgro.2010.10.125
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We have studied the growth of zinc-blende GaN and Al(x)Ga(1-x)N layers, structures and bulk crystals by molecular beam epitaxy (MBE). MBE is normally regarded as an epitaxial technique for growth of very thin layers with monolayer control of their thickness. However, we have used the MBE technique for bulk crystal growth and have produced GaN layers up to 100 mu m in thickness. Thick, undoped, cubic GaN films were grown on semi-insulating GaAs (0 0 1) substrates by a modified plasma-assisted molecular beam epitaxy (PA-MBE) method and were removed from the GaAs substrate after the growth. The resulting free-standing GaN wafers may be used as substrates for further epitaxy of cubic GaN-based structures and devices. We have demonstrated that the PA-MBE process, we had developed, also allows us to achieve free-standing zinc-blende Al(x)Ga(1-x)N wafers. (C) 2010 Elsevier B.V. All rights reserved.
引用
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页码：80 / 83
页数：4
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