Diode-pumped room temperature single longitudinal mode lasing of Tm,Ho:YLF microchip laser at 2050.5 μm

被引：6

作者：

Meng, P. B. ^{[1
]}

Yao, B. Q. ^{[1
]}

Zhou, R. L. ^{[1
]}

Chen, F. ^{[1
]}

Ju, Y. L. ^{[1
]}

Wang, Y. Z. ^{[1
]}

机构：

[1] Harbin Inst Technol, Natl Key Lab Tunable Laser Technol, Harbin 150001, Peoples R China

来源：

LASER PHYSICS | 2011年 / 21卷 / 04期

关键词：

CONTINUOUS-WAVE OPERATION; Q-SWITCH OPERATION; TMYLF LASER; TM; HO; WAVELENGTH; POWER; YAG;

D O I：

10.1134/S1054660X11070243

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Room-temperature operation of a single longitudinal-mode c-cut Tm(6%), Ho(0.4%):YLF microchip laser is reported. An incident pump power of 713 mW is used to generate the maximum single-frequency output power of 17 mW at 2050.5 nm, which corresponds to the slope efficiency of 10%.

引用

页码：643 / 647

页数：5

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