Compensation of the piezo-Hall effect in integrated Hall sensors on (100)-Si

被引:27
作者
Ausserlechner, Udo [1 ]
Motz, Mario [1 ]
Holliber, Michael [1 ]
机构
[1] Infineon Technol Austria AG, A-9500 Villach, Austria
关键词
magnetic sensitivity drift; mechanical stress compensation; package stress; piezo-Hall; piezo-resistance;
D O I
10.1109/JSEN.2007.907039
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Silicon Hall sensors are known to suffer from a long-term drift in the magnetic sensitivity between 1% and 4%, depending on the degree of moisture in the mold compound of the package. This drift is mainly caused by changes of mechanical stress exerted by the plastic package onto the die. We present a system, which continuously measures the relevant stress components, estimates the sensitivity drift, and corrects for it digitally. An individual precalibration versus temperature is necessary to achieve the required level of accuracy. Results from laboratory characterization with pressure cells and lifetime drift during qualification runs show that this system can keep the drift of magnetic sensitivity well below 1%.
引用
收藏
页码:1475 / 1482
页数:8
相关论文
共 16 条
[1]  
AUSSERLECHNER M, 2004, P IEEE SENS VIENN AU, V1, P455
[2]  
AUSSERLECHNER U, 2001, Patent No. 6906514
[3]  
AUSSERLECHNER U, 2004, P IEEE SENS VIENN AU, V1, P1117
[4]  
Bittle D. A., 1991, Transactions of the ASME. Journal of Electronic Packaging, V113, P203, DOI 10.1115/1.2905397
[5]  
Fischer S., 2005, P 12 INT SENS C NUER, VII, P43
[6]  
HALG B, 1988, J APPL PHYS, V64, P276, DOI 10.1063/1.341422
[7]  
KOMATSU S, 1977, Patent No. 4236832
[8]  
MANIC D, 2000, THESIS ETH ZURICH
[9]  
MANIC D, 1999, SENSOR ACTUAT A-PHYS, V85, P244
[10]  
Motz M, 2006, 2006 IEEE INT SOL ST, P1151, DOI 10.1109/ISSCC.2006.1696160