Nanofabrication for Transistor Matrix Produced by Self-Aligned Imprint Lithography

被引：5

作者：

Mei, P. ^{[1
]}

Almanza-Workman, M. ^{[2
]}

Chaiken, A. ^{[1
]}

Cobene, R. L. ^{[1
]}

Elder, R. ^{[1
]}

Garcia, Bob ^{[2
]}

Jackson, W. ^{[1
]}

Jam, M. ^{[1
]}

Jeans, A. ^{[1
]}

Kim, H. J. ^{[2
]}

Kwon, O. ^{[2
]}

Luo, H. ^{[1
]}

Perlov, C. ^{[1
]}

Taussig, C. ^{[1
]}

机构：

[1] Hewlett Packard Labs, Palo Alto, CA 94304 USA

[2] PowerFilm Inc, Ames, IA 50114 USA

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2010年 / 10卷 / 11期

关键词：

Nano-Imprint; Roll to Roll Processing; Self-Aligned Imprint Lithography; Thin Film Transistor; Flexible Display;

D O I：

10.1166/jnn.2010.2839

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

This paper describes an approach of combining nanofabrication techniques with roll-to-roll fabrication of thin film transistor backplanes for flexible display applications.

引用

页码：7419 / 7422

页数：4

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