Smart power approaches VLSI complexity

被引：30

作者：

Contiero, C ^{[1
]}

Galbiati, P ^{[1
]}

Palmieri, M ^{[1
]}

Ricotti, G ^{[1
]}

Stella, R ^{[1
]}

机构：

[1] SGS Thomson Microelect, Dedicated Prod Grp, I-20010 Milano, Italy

来源：

ISPSD '98 - PROCEEDINGS OF THE 10TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 1998年

关键词：

D O I：

10.1109/ISPSD.1998.702539

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reviews the latest trends in the mixed power process field driven by the need to integrate more and more functions onto the same chip. The mole recent BCD (Bipolar, CMOS, DMOS) examples are a demonstration of how Smart Power technology evolves today following, with some delay, the road maps of VLSI CMOS and BICMOS. The issues behind the trend to converge to a common technology platform maintaining the peculiar aspects of power functions integration, are discussed as well as the new possible realizations in the field of Super Smart Power Ics.

引用

页码：11 / 16

页数：6