MEMS-based adaptive impedance matching network

被引：0

作者：

Srivastava, A ^{[1
]}

机构：

[1] Louisiana State Univ, Dept Elect & Comp Engn, Baton Rouge, LA 70803 USA

来源：

SMART STRUCTURES AND MATERIALS 2003: SMART ELECTRONICS, MEMS, BIOMEMS, AND NANOTECHNOLOGY | 2003年 / 5055卷

关键词：

MEMS; tunable/switchable capacitor; impedance matching; passive integration; GSM RF power amplifier;

D O I：

10.1117/12.483569

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The architecture level design of an impedance matching network is presented for the global system for mobile communication radio frequency (GSM RF) power amplifier module used in a typical cellular handset. Designs for the low and high output impedance of the power amplifier and 50 Ohm antenna impedance are considered. Impedance matching network design is presented for a typical low output impedance (Z = 2-j*0.4 Ohm) of the power amplifier and 50 Ohm antenna impedance and is made adaptive for high output impedance (Z = 7+j*2 Ohm). It is shown that the network can be made adaptive to varying output requirements of the power amplifier by tuning the network capacitance toward the antenna end. The architecture level design of a 25 Ohm antenna impedance is also presented and shown that that the impedance matching network can be made adaptive, which would require the use of MEMS switches. The adaptive impedance matching networks can be implemented in a passive integration technology with post-processing for MEMS components.

引用

页码：19 / 28

页数：10

共 14 条

[1]

ABBUCKLE B, 2000, SOLID STATE TECH NOV, P84

[2]

[Anonymous], 2008, RF Circuit Design

[3] RF-MEMS switches for reconfigurable integrated circuits [J].

Brown, ER .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1998, 46 (11) :1868-1880

[4]

De Los Santos H.J., 1999, INTRO MICROELECTROME

[5] Technology for passive integration [J].

de Samber, M ;

Tegelaers, L .

PHILIPS JOURNAL OF RESEARCH, 1998, 51 (03) :389-410

[6]

Gonzalez G., 1997, Microwave transistor amplifiers: analysis and design, VSecond

[7] A monolithic SiPCS-CDMA power amplifier with an impedance-controllable biasing scheme [J].

Luo, SF ;

Sowlati, T .

2001 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2001, :217-220

[8]

Razavi B, 2011, RF Microelectronics, V2nd

[9]

ROFOUGARAN M, 1994, 1994 SYMPOSIUM ON VLSI CIRCUITS, P133

[10]

SRIVASTAVA A, 2002, 0241 LSU OIP

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