Specific heat of a doped Kondo semiconductor (Ce1-xLax)(3)Bi4Pt3

被引：2
作者：
Shiina, R [1 ]
机构：
[1] SCI UNIV TOKYO, FAC SCI, DEPT PHYS, SHINJUKU KU, TOKYO 162, JAPAN
来源：
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1996年 / 65卷 / 04期
关键词：
Kondo semiconductor; doping; specific heat;
D O I：
10.1143/JPSJ.65.1131
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
[No abstract available]
引用
收藏
页码：1131 / 1132
页数：2
相关论文
共 6 条
  • [1] HYBRIDIZATION GAP IN CE3BI4PT3
    HUNDLEY, MF
    CANFIELD, PC
    THOMPSON, JD
    FISK, Z
    LAWRENCE, JM
    [J]. PHYSICAL REVIEW B, 1990, 42 (10): : 6842 - 6845
  • [2] NEW FUNCTIONAL INTEGRAL APPROACH TO STRONGLY CORRELATED FERMI SYSTEMS - THE GUTZWILLER APPROXIMATION AS A SADDLE-POINT
    KOTLIAR, G
    RUCKENSTEIN, AE
    [J]. PHYSICAL REVIEW LETTERS, 1986, 57 (11) : 1362 - 1365
  • [3] ENERGY-GAP SUPPRESSION BY ALLOYING IN CENI1-XPTXSN
    NISHIGORI, S
    GOSHIMA, H
    SUZUKI, T
    FUJITA, T
    NAKAMOTO, G
    TAKABATAKE, T
    FUJII, H
    SAKURAI, J
    [J]. PHYSICA B-CONDENSED MATTER, 1993, 186-88 : 406 - 408
  • [4] IMPURITY BANDS IN KONDO INSULATORS
    SCHLOTTMANN, P
    [J]. PHYSICAL REVIEW B, 1992, 46 (02): : 998 - 1004
  • [5] IMPURITY EFFECTS OF HEAVY-FERMION SEMICONDUCTORS
    SHIINA, R
    [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1995, 64 (03) : 702 - 705
  • [6] THOMPSON JD, 1993, TRANSPORT AND THERMAL PROPERTIES OF F-ELECTRON SYSTEMS, P35
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