Metastable ordering of domain walls into Si(111)(2√21x2√21)R(±10.9°)-Au structure studied by reflection high energy electron diffraction and scanning tunneling microscopy

被引：6

作者：

Sakai, H

Khramtsova, EA

Ichimiya, A

机构：

[1] Nagoya Univ, Dept Quantum Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[2] Inst Automat & Control Proc, Vladivostok 690041, Russia

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1998年 / 37卷 / 6B期

关键词：

silicon; gold; surface structure; domain wall; ordering; STM; RHEED;

D O I：

10.1143/JJAP.37.L755

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A metastable Si(111)(2 root 21x2 root 21)R(+/-10.9 degrees)-Au structure has been Studied for the first time. The structure forms following the first cooling of a deposited Au film as a result of the metastable ordering of the domain walls and transforms into the Si(111)alpha(root 3x root 3)R30 degrees-Au structure after the second annealing at the substrate temperature of approximately (250+/-50)degrees C.

引用

页码：L755 / L757

页数：3

共 5 条

[1] DOMAIN-WALL STRUCTURE OF SI(111) (ROOT-3X-ROOT-3) R30-DEGREES-AU [J].