Flip-chip mounted 25.8-Gb/s directly modulated InGaAsP DFB laser with Ru-doped semi-insulating buried heterostructure

被引：4

作者：

Kanazawa, Shigeru ^{[1
]}

Ito, Toshio ^{[1
]}

Sato, Tomonari ^{[3
]}

Iga, Ryuzo ^{[2
]}

Kobayashi, Wataru ^{[2
]}

Takahata, Kiyoto ^{[1
]}

Sanjoh, Hiroaki ^{[1
]}

Ishii, Hiroyuki ^{[2
]}

机构：

[1] NTT Corp, NTT Device Innovat Ctr, Atsugi, Kanagawa, Japan

[2] NTT Corp, NTT Device Technol Labs, Atsugi, Kanagawa, Japan

[3] NTT Corp, NTT Photon Labs, Atsugi, Kanagawa, Japan

来源：

IEICE ELECTRONICS EXPRESS | 2015年 / 12卷 / 01期

关键词：

DML; flip-chip; 100GbE;

D O I：

10.1587/elex.11.20141028

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first directly modulated InGaAsP DFB laser module using the flip-chip mounting technique was fabricated for 25.8-Gb/s operation. The fabricated laser chip has p-and n-electrodes on the surface side. This structure is suitable for flip-chip mounting, which provides a high modulation bandwidth. The fabricated module provided clear eye opening with a dynamic extinction ratio of over 4 dB when operated 25.8 Gb/s.

引用

页码：1 / 4

页数：4

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