Simulation of single-electron transport processes in thin granulated chromium films

被引:3
作者
Zalunin, V. O. [1 ]
Krupenin, V. A. [3 ]
Vasenko, S. A.
Zorin, A. B. [1 ,2 ]
机构
[1] Moscow MV Lomonosov State Univ, Skobeltsyn Inst Nucl Phys, Moscow 119899, Russia
[2] Fed Phys Tech Ctr, D-38116 Braunschweig, Germany
[3] Russian Acad Sci, Inst Nanotechnol Microelect, Moscow 119991, Russia
关键词
Bias Voltage; JETP Letter; Single Electron; Tunnel Junction; Conducting State;
D O I
10.1134/S0021364010080084
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The results of the numerical simulation of the single-electron transport in two-dimensional granulated chromium films at low temperatures are reported. A theoretical model has been developed in which the granulated film is represented as a two-dimensional matrix of conducting metallic granules (islands), which are weakly coupled with each other through slightly transparent tunnel barriers, ensuring the transport of single electrons localized on the islands. The recently measured current-voltage characteristics of submicron rectangular chromium samples have been explained by taking into account the inhomogeneities in the nanometer sizes of the islands and their effective electron temperature depending on the flowing current. A transition from the two-dimensional regime to the quasi-one-dimensional regime of the single-electron transport leading to the experimentally observed hysteresis has been revealed in the simulated system.
引用
收藏
页码:402 / 406
页数:5
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