Correlated Oxide Physics and Electronics

被引：127
作者：
Ngai, J. H. [1 ]
Walker, F. J. [2 ,3 ]
Ahn, C. H. [2 ,3 ,4 ]
机构：
[1] Univ Texas Arlington, Dept Phys, Arlington, TX 76019 USA
[2] Yale Univ, Ctr Res Interface Struct & Phenomena, New Haven, CT 06520 USA
[3] Yale Univ, Dept Appl Phys, New Haven, CT 06520 USA
[4] Yale Univ, Dept Mech Engn & Mat Sci, New Haven, CT 06520 USA
来源：
ANNUAL REVIEW OF MATERIALS RESEARCH, VOL 44 | 2014年 / 44卷
关键词：
transition metal oxides; correlated phenomena; superconductivity; magnetism; metal-insulator transitions; METAL-INSULATOR-TRANSITION; ELECTRIC-FIELD CONTROL; MOTT TRANSITION; SUPERCONDUCTIVITY; INTERFACE; SPECTROSCOPY; SUPPRESSION; COEXISTENCE; MODULATION; INJECTION;
D O I：
10.1146/annurev-matsci-070813-113248
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Transition metal oxides exhibit a range of correlated phenomena with applications to novel electronic devices that possess remarkable functionalities. This article reviews recent progress in elucidating bothmechanisms that govern correlated behavior in transition metal oxides and advancements in device fabrication that have enabled strong correlations to be controlled through applied electric fields. Advancements in the growth of transition-metal-oxide films and artificial heterostructures have enabled superconductivity, magnetism, and metal-insulator transitions to be controlled in cuprates, manganites, and vanadates by using the electric field effect. In addition, interfaces between transition metal oxides have recently emerged as a setting in which strong correlations can be manipulated in two dimensions to realize unusual quantum-ordered phases. Finally, key relationships between structure and transport in ultrathin films of transition metal oxides have been elucidated. Coupling the structural degrees of freedom in oxides to applied electric fields thus opens new pathways to control correlated behavior in devices.
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页码：1 / 17
页数：17
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