Phonon-assisted transitions and optical gain in indirect semiconductors

被引：2
|
作者：
Imhof, Sebastian [1 ]
Thraenhardt, Angela [1 ]
机构：
[1] Tech Univ Chemnitz, Inst Phys, D-09107 Chemnitz, Germany
来源：
PHYSICAL REVIEW B | 2010年 / 82卷 / 08期
关键词：
BULK CRYSTALLINE SILICON; LIGHT-EMISSION; LASER ACTION; SUPERLATTICES; TRANSPORT;
D O I：
10.1103/PhysRevB.82.085303
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Microscopic semiconductor theory is applied to an indirect Si-type semiconductor quantum well system. We discuss the absorption and stimulated emission of light accompanied by the creation or annihilation of phonons. We find strong differences to the optical properties of conventional direct semiconductors, including an asymmetric behavior where the maximum gain strongly exceeds the low-density absorption.
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页数：6
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