AlGaN/GaN Polarization-Doped Field-Effect Transistors With Graded Heterostructure

被引：25

作者：

Fang, Yulong ^{[1
,2
]}

Feng, Zhihong ^{[2
]}

Yin, Jiayun ^{[2
]}

Zhou, Xingye ^{[2
]}

Wang, Yuangang ^{[2
]}

Gu, Guodong ^{[2
]}

Song, Xubo ^{[2
]}

Lv, Yuanjie ^{[2
]}

Li, Chengming ^{[1
]}

Cai, Shujun ^{[2
]}

机构：

[1] Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing 100083, Peoples R China

[2] Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit, Shijiazhuang 050051, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2014年 / 61卷 / 12期

关键词：

3-D electron slab; current collapse; field-effect transistors (FETs); graded heterostructure; linearity; HEMTS;

D O I：

10.1109/TED.2014.2364457

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The design, fabrication, and characterization of AlGaN/GaN polarization-doped field-effect transistors (PolFETs) with graded heterostructure are presented in this paper. The 3-D profiles of carriers are obtained across the graded AlGaN/GaN heterostructure grown on a sapphire substrate, which brings about some novel features. The dc transfer and frequency characteristics exhibit bias-insensitive throughout the low-and high-voltage operating regions, demonstrating the potential for high linearity applications. In addition, dynamic I-V measurement was carried out to analyze the trapping behaviors. Negligible current collapses were observed in the unpassivated PolFETs with graded heterostructure, which can be explained in the aspect of unique energy band profiles of AlGaN/GaN graded heterostructures.

引用

页码：4084 / 4089

页数：6

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