Impact of acceptor concentration on electrical properties and density of interface states of 4H-SiC n-metal-oxide-semiconductor field effect transistors studied by Hall effect

被引：28

作者：

Ortiz, G. ^{[1
]}

Strenger, C. ^{[2
]}

Uhnevionak, V. ^{[2
]}

Burenkov, A. ^{[2
]}

Bauer, A. J. ^{[2
]}

Pichler, P. ^{[2
]}

Cristiano, F. ^{[1
,3
]}

Bedel-Pereira, E. ^{[1
,3
]}

Mortet, V. ^{[1
,4
]}

机构：

[1] LAAS CNRS, F-31031 Toulouse 4, France

[2] Fraunhofer IISB, D-91058 Erlangen, Germany

[3] Univ Toulouse, LAAS, F-31400 Toulouse, France

[4] Acad Sci Czech Republ, Vvi, Prague 8, Czech Republic

来源：

APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 06期

关键词：

CHANNEL MOBILITY; MOSFETS;

D O I：

10.1063/1.4908123

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Silicon carbide n-type metal-oxide-semiconductor field effect transistors (MOSFETs) with different p-body acceptor concentrations were characterized by Hall effect. Normally OFF MOSFETs with good transfer characteristics and low threshold voltage were obtained with a peak mobility of similar to 145 cm(2) V-1 s(-1) for the lowest acceptor concentration. The results are explained in terms of an increase of Coulomb scattering centers when increasing the background doping. These scattering centers are associated to fixed oxide and trapped interface charges. Additionally, the observed mobility improvement is not related to a decrease of the interface states density as a function of background doping. (C) 2015 AIP Publishing LLC.

引用

页数：5

共 25 条

[1] Elimination of SiC/SiO2 interface states by preoxidation ultraviolet-azone cleaning [J].