Molecular-beam-epitaxy growth of high-quality InGaAsN/GaAs quantum well lasers emitting at 1.3 μm

被引：8

作者：

Wang, JS ^{[1
]}

Hsiao, RS

Lin, G

Lin, KF

Liu, HY

Lai, CM

Wei, L

Liang, CY

Chi, JY

Kovsh, AR

Maleev, NA

Livshits, DA

Chen, JF

Yu, HC

Ustinov, VM

机构：

[1] Ind Technol Res Inst, OES, Hsinchu 310, Taiwan

[2] Chung Yuan Christian Univ, Dept Phys, Chungli 32023, Taiwan

[3] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 310, Taiwan

[4] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[5] Natl Cheng Kung Univ, Inst Microelect, Tainan 701, Taiwan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2004年 / 22卷 / 06期

关键词：

D O I：

10.1116/1.1807839

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Molecular-beam-epitaxy growth of high structural and optical-quality InGaAsN/GaAs quantum wells (QW) has been investigated. The material quality can be improved significantly by using low-temperature growth to suppress the phase separation. High-performance ridge-waveguide InGaAsN/GaAs single QW lasers emitting at 1.3 mum have been demonstrated. Infinite-cavity-length threshold-current density of 400 A /cm(2), internal quantum efficiency of 96%. and a slope efficiency of 0.67 W/A for a cavity length L=1 mm were obtained. A TO46 packaging laser shows sin-le lateral-mode kink-free output power of more than 200 mW with a maximum total wallplug efficiency of 29% at room temperature under continuous wave (cw) operation. Moreover. 1.3 Am InGaAsN/GaAs QW vertical-cavity surface-emitting lasers with a threshold current density lower than 2 KA/cm(2) at room temperature have been achieved. We obtained multimode cw output power and slope efficiency in excess of 1 mW and 0.15 W/A. respectively. (C) 2004 American Vacuum Society.

引用

页码：2663 / 2667

页数：5

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