Molecular-beam-epitaxy growth of high-quality InGaAsN/GaAs quantum well lasers emitting at 1.3 μm

被引：8
作者：
Wang, JS [1 ]
Hsiao, RS
Lin, G
Lin, KF
Liu, HY
Lai, CM
Wei, L
Liang, CY
Chi, JY
Kovsh, AR
Maleev, NA
Livshits, DA
Chen, JF
Yu, HC
Ustinov, VM
机构：
[1] Ind Technol Res Inst, OES, Hsinchu 310, Taiwan
[2] Chung Yuan Christian Univ, Dept Phys, Chungli 32023, Taiwan
[3] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 310, Taiwan
[4] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[5] Natl Cheng Kung Univ, Inst Microelect, Tainan 701, Taiwan
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2004年 / 22卷 / 06期
关键词：
D O I：
10.1116/1.1807839
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Molecular-beam-epitaxy growth of high structural and optical-quality InGaAsN/GaAs quantum wells (QW) has been investigated. The material quality can be improved significantly by using low-temperature growth to suppress the phase separation. High-performance ridge-waveguide InGaAsN/GaAs single QW lasers emitting at 1.3 mum have been demonstrated. Infinite-cavity-length threshold-current density of 400 A /cm(2), internal quantum efficiency of 96%. and a slope efficiency of 0.67 W/A for a cavity length L=1 mm were obtained. A TO46 packaging laser shows sin-le lateral-mode kink-free output power of more than 200 mW with a maximum total wallplug efficiency of 29% at room temperature under continuous wave (cw) operation. Moreover. 1.3 Am InGaAsN/GaAs QW vertical-cavity surface-emitting lasers with a threshold current density lower than 2 KA/cm(2) at room temperature have been achieved. We obtained multimode cw output power and slope efficiency in excess of 1 mW and 0.15 W/A. respectively. (C) 2004 American Vacuum Society.
引用
收藏
页码：2663 / 2667
页数：5
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