Sidewall quality in proton beam writing

被引：10

作者：

Chiam, S. Y. ^{[1
]}

van Kan, J. A. ^{[1
]}

Osipowicz, T. ^{[1
]}

Udalagama, C. N. B. ^{[1
]}

Watt, F. ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Phys, Ctr Ion Beam Applicat, Singapore 117542, Singapore

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2007年 / 260卷 / 01期

关键词：

proton beam writing; cross sectional resist roughness; PMMA;

D O I：

10.1016/j.nimb.2007.02.012

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Proton beam writing has been shown to allow the fabrication of high aspect ratio nanostructures at sub-100 nm dimension and with smooth and vertical sidewalls. For applications such as the fabrication of waveguides, sidewall smoothness is an important issue. We report results from investigations into side wall roughness measured directly with Atomic Force Microscopy. Structures were written in bulk poly(methylmethacrylate) (PMMA) with 2 MeV protons specifically to allow side access. We studied the effects of different scanning algorithms and also the variation of wall roughness with development time and ion penetration depth. Our results indicate that sidewall rms roughness of less than 7 nm is readily achievable. Multi-loop scanning and optimization of the scanning algorithm can lead to significant improvements in sidewall smoothness. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：455 / 459

页数：5

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