Growth and segregation of GaAs-AlxIn1-xP core-shell nanowires

被引：34
作者：
Wagner, Jakob B. [1 ]
Skold, Niklas
Wallenberg, L. Reine [1 ]
Samuelson, Lars
机构：
[1] Lund Univ, Polymer & Mat Chem nCHREM, S-21100 Lund, Sweden
来源：
JOURNAL OF CRYSTAL GROWTH | 2010年 / 312卷 / 10期
关键词：
HRTEM; Segregation; Core-shell nanowire; GaAs; AlxIn1-xP; INDIUM-PHOSPHIDE NANOWIRES; GAAS NANOWIRES; BUILDING-BLOCKS; DEVICES;
D O I：
10.1016/j.jcrysgro.2010.02.009
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The development of a ternary AlxIn1-xP shell grown around GaAs nanowires epitaxially grown in the [(1) over bar (1) over bar (1) over bar] direction has been studied. Morphology and composition of the shell have been studied using cross-sectional transmission electron microscopy (TEM). The side facets of the shell are found to develop dominant {1 (1) over bar 0} macro facets with small (approx. 5 nm) {1 1 (2) over bar} facets independent of the GaAs core side facets. Phase segregation is observed as AIP developing from the {1 1 (2) over bar} facets, while Al0.5In0.5P is found in the rest of the ternary shell. (C) 2010 Elsevier B.V. All rights reserved.
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收藏
页码：1755 / 1760
页数：6
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