Inelastic scattering and spin polarization in dilute magnetic semiconductor (Ga,Mn)Sb

被引：9

作者：

Panguluri, Raghava P. ^{[1
]}

Nadgorny, B. ^{[1
]}

Wojtowicz, T. ^{[2
]}

Liu, X. ^{[3
]}

Furdyna, J. K. ^{[3
]}

机构：

[1] Wayne State Univ, Dept Phys & Astron, Detroit, MI 48201 USA

[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[3] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 25期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2819608

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The point contact Andreev reflection technique has already been used to measure the spin polarization of some of the dilute magnetic semiconductors, such as narrow-band (In,Mn)Sb, as well as wider gap (Ga,Mn)As. While conventional Andreev reflection has been demonstrated in (In,Mn)Sb, quasiparticle density of states broadening has been observed in (Ga,Mn)As, possibly due to inelastic scattering effects. Here, we investigate the spin polarization, magnetic, and transport properties of epitaxially grown (Ga,Mn)Sb films with the Curie temperature of similar to 10 K. The spin polarization of 57 +/- 5% was measured. Spectrum broadening in (Ga,Mn)Sb has also been observed.

引用

页数：3

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