Defects in a bulk GaAs and Q-switching of a Nd:YAG laser with a GaAs output coupler

被引：0

作者：

Payziyev, Sh. ^{[1
]}

Bakhramov, S. ^{[1
]}

Kasimov, A. ^{[1
]}

Shayimov, F. ^{[1
]}

机构：

[1] Sci & Prod Assoc Academpribor, Tashkent 100125, Uzbekistan

来源：

LAT 2010: INTERNATIONAL CONFERENCE ON LASERS, APPLICATIONS, AND TECHNOLOGIES | 2011年 / 7994卷

关键词：

Nd:YAG laser; GaAs; defect concentration; mode-locking; YAG LASER; EMISSION;

D O I：

10.1117/12.881110

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

By using a bulk GaAs as an output coupler as well as a saturable absorber, with changing of concentration of defects inside the laser cavity, Q-switching of flash-lamp pumped Nd:YAG laser has been studied. It is shown that the mechanism of formation of the laser pulses, in a wide range of duration which were reported in a lot of previous papers is caused by the intracavity changes of the defect concentration in a GaAs.

引用

页数：7

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