Investigation on 4H-SiC MOSFET with three-section edge termination

被引：2
|
作者：
Zhou, Xin [1 ]
Yuan, ZhangYi'an [1 ]
Deng, Xiaochuan [1 ]
Li, Xuan [1 ]
Qiao, Ming [1 ]
Li, Zhaoji [1 ]
Zhang, Bo [1 ]
机构：
[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2018年 / 124卷
基金：
中国博士后科学基金; 中国国家自然科学基金;
关键词：
SiC MOSFET; Three-section edge termination; HTRB; HTGB; Degradation mechanism; VOLTAGE; RELIABILITY;
D O I：
10.1016/j.spmi.2018.10.018
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
SiC MOSFET with three-section edge termination is investigated in this paper. The edge termination for SiC MOSFET is divided into three sections with different field limited rings and the space between rings, which benefits to achieve uniform electric field and high breakdown voltage (BV). The degradation mechanism of BV and on-resistance during high temperature reverse bias (HTRB) and high temperature gate bias (HTGB) experiment are revealed. For HTRB, positive oxide trapped charge generation on SiC/SiO2 surface enhances the electric field peak at breakdown point, which is responsible for BV decreasing. For HTGB, negative oxide trapped charge generation on SiC/SiO2 surface is responsible for the increase of threshold voltage and on-resistance.
引用
收藏
页码：139 / 144
页数：6
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