Structural and optical properties of gadolinium doped ZnTe thin films

被引：6
|
作者：
Lopez, J. D. [1 ,2 ]
Tirado-Mejia, L. [1 ]
Ariza-Calderon, H. [1 ]
Riascos, H. [3 ]
de Anda, F. [4 ]
Mosquera, E. [2 ,5 ]
机构：
[1] Univ Quindio, Inst Interdisciplinario Ciencias, Lab Optoelect, Armenia AA460, Colombia
[2] Univ Valle, Dept Fis, Cali AA25360, Colombia
[3] Univ Tecnol Pereira, Cra 27 10-02, Pereira 660003, Risaralda, Colombia
[4] UASLP, Inst Invest Comunicac Opt, Av Karakorum 1470, San Luis Potosi 78210, San Luis Potosi, Mexico
[5] Univ Valle, CENM, Cali AA25360, Colombia
来源：
MATERIALS LETTERS | 2020年 / 268卷
关键词：
ZnTe; Thermal evaporation; Te-doped GaSb substrate; Thin films; GASB;
D O I：
10.1016/j.matlet.2020.127562
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
ZnTe and Ga-doped ZnTe thin films were prepared onto glass and Te-doped GaSb substrates by thermal evaporation method under vacuum and their structural and optical properties were studied. XRD results show that for both substrates, the doping with gadolinium yield a reduction in the ZnTe lattice parameter. The optical band gap increases with incorporation of Gd into the ZnTe structure and the values obtained are 2.19 and 2.29 eV, respectively for glass and GaSb:Te substrates. The presence of defects due to Gd doping into ZnTe thin films is evidenced. (C) 2020 Elsevier B.V. All rights reserved.
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页数：4
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