Low power 18T pass transistor logic ripple carry adder

被引:1
作者
Thangasamy, Veeraiyah [1 ]
Kamsani, Noor Ain [1 ]
Hamidon, Mohd Nizar [1 ]
Hashim, Shaiful Jahari [1 ]
Yusoff, Zubaida [2 ]
Bukhori, Muhammad Faiz [3 ]
机构
[1] Univ Putra Malaysia, Fac Engn, Serdang 43400, Malaysia
[2] Multimedia Univ, Fac Engn, Cyberjaya 63100, Malaysia
[3] Univ Kebangsaan Malaysia, Fac Engn & Built Environm, Dept Elect Elect & Syst Engn, Bangi 43600, Malaysia
来源
IEICE ELECTRONICS EXPRESS | 2015年 / 12卷 / 06期
关键词
full adder; full-swing output; low-power; low-delay; power delay product (PDP); CMOS FULL ADDER; LOW-VOLTAGE; DESIGN; CELL;
D O I
10.1587/elex.12.20150176
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, a high-speed low-power 18T CMOS full adder design featuring full-swing output is proposed. The adder is designed and simulated using pass transistor logic of the 130 nm CMOS technology, at a supply voltage of 1.2V. The obtained Power Delay Product (PDP) of its critical path is 22 x 10(-18) J, which is a marked improvement of 61% to 98% compared against those of the 28T conventional CMOS, 20T transmission gate (TGA), 16T transmission function (TFA), 14T hybrid, 24T hybrid pass logic with static CMOS, and 28T differential pass logic (DPL) full adders simulated with the same process technology. Its power consumption is lower by 32% to 85%, with speed performance comparable to those of other highspeed adders reported in the literature. Occupying an aerial footprint of only 107 mu m(2) (8.00 mu m x 13.41 mu m), the proposed full adder is also capable to function at lower supply voltages of 0.4 V and 0.8V without significant performance degradation.
引用
收藏
页码:1 / 12
页数:12
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