Pt/GaN based Schottky diodes for gas sensing applications

被引：1

作者：

Ali, M ^{[1
]}

Cimalla, V ^{[1
]}

Ambacher, O ^{[1
]}

Tilak, V ^{[1
]}

Sandvik, P ^{[1
]}

Merfeld, D ^{[1
]}

机构：

[1] Tech Univ Ilmenau, Ctr Micro & Nanotechnol, D-98693 Ilmenau, Germany

来源：

PROCEEDINGS OF THE IEEE SENSORS 2004, VOLS 1-3 | 2004年

关键词：

Schottky diodes; hydrogen; sensitivity; platinum; GaN; response time;

D O I：

10.1109/ICSENS.2004.1426331

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The performance of Pt/GaN Schottky diodes with different thickness of the catalytic metal were investigated as hydrogen gas detectors. The area as well as the thickness of the Pt were varied between 250 mu m(2) and 1000 mu m(2), 8 and 40 nm, respectively. The sensitivity to hydrogen gas was investigated in dependence on the active area, the Pt thickness and the operating temperature for 1vol% hydrogen in synthetic air. We observed a significant increase of the sensitivity and a decrease of the response and recovery times by increasing the temperature of operation to about 350 degrees C and by decreasing the Pt thickness down to 8 nm. Electron microscopy of the microstructure showed that the thinner Platinum had a higher grain boundary density. The increase in sensitivity with decreasing Pt thickness points to the dissociation of molecular hydrogen on the surface, the diffusion of atomic hydrogen along the Platinum grain boundaries the adsorption of hydrogen at the Pt/GaN interface as a possible mechanism of sensing hydrogen by Schottky diodes.

引用

页码：959 / 962

页数：4

共 4 条

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