Molecular dynamics simulation of ultra-precision machining 3C-SiC assisted by ion implantation

In this paper, molecular dynamics simulations were performed to simulate ion implantation and diamond grinding processes of SiC. Moreover, workpiece surface roughness was predicted based on Rayleigh probability distribution. Effects of ion implantation energy on the temperature, potential energy, cutting force, friction coefficient, and surface morphology of the workpiece during machining were analyzed. It has been revealed that the higher the ion implantation energy, the higher the proportion of internal damage, the lower the temperature rise rate in the workpiece, the lower the cutting force, the smaller the length and number of dislocations, the higher the removal efficiency of single abrasive particles, and the higher the final surface roughness. Among them, the changing trend of surface roughness is qualitative analysis under specific experimental conditions. In conclusion, ion implantation is favorable to SiC processing, and revealing its influence mechanisms has important guiding significance for practical applications.