Performance analysis of lead-free CsBi3I10-based perovskite solar cell through the numerical calculation

被引：39

作者：

Ahmmed, Shamim ^{[1
,2
]}

Karim, Md Abdul ^{[3
,4
]}

Rahman, Md Hafijur ^{[5
]}

Aktar, Asma ^{[1
]}

Islam, Md Rasidul ^{[6
]}

Islam, Ashraful ^{[3
]}

Ismail, Abu Bakar Md ^{[1
]}

机构：

[1] Univ Rajshahi, Solar Energy Lab, Dept Elect & Elect Engn, Rajshahi 6205, Bangladesh

[2] North Bengal Int Univ, Dept Elect & Elect Engn, Rajshahi 6100, Bangladesh

[3] Natl Inst Mat Sci NIMS, Photovolta Mat Grp, Ctr Green Res Energy & Environm Mat, 1-2-1 Sengen, Tsukuba, Ibaraki 3050047, Japan

[4] Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058573, Japan

[5] Pabna Univ Sci & Technol, Dept Phys, Pabna 6600, Bangladesh

[6] Chinese Acad Sci, Inst Semicond, Beijing Key Lab Low Dimens Semicond Mat & Devices, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

SOLAR ENERGY | 2021年 / 226卷

关键词：

Perovskite solar cell; Band offset; Defect concentration; Defect energy level; Holes capture cross-section; HOLE-TRANSPORTING MATERIALS; CERIUM OXIDE; CONVERSION EFFICIENCY; BAND-OFFSET; THIN-FILMS; LAYERS; RECOMBINATION;

D O I：

10.1016/j.solener.2021.07.076

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Bismuth-based halide perovskite (CsBi3I10) is a promising absorber material for the fabrication of eco-friendly perovskite solar cells (PSCs). In this research, the performance of the CsBi3I10-based PSCs with different hole transport layers (HTLs) has been numerically analyzed. The open circuit voltage (VOC) has enhanced up to 360 mV after the addition of NiOx HTL in the heterostructure of the CsBi3I10-based PSC. A comprehensive numerical study of the role of band alignment, key defect parameters of the CsBi3I10 absorber layer, and CeOx/CsBi3I10 interface on the newly designed heterostructure (ITO/CeOx/CsBi3I10/NiOx/Au) performance of the CsBi3I10based PSC has been conducted. A massive deterioration of the VOC has been initiated when defect concentration (Nt) of CsBi3I10 crosses above 1014 cm-3. Apart from the Nt, defect energy level within the bandgap (Et), and holes capture cross-section (sigma p) of the CsBi3I10 layer have also significantly affected the VOC loss. Besides, the investigation indicates that the device performance is almost independent of Et of the CeOx/CsBi3I10 interface and slightly decreases with the increase of Nt and sigma p. Finally, the photovoltaic performance of the PSC has been explored for various thickness and carrier concentration of the CsBi3I10, cerium oxide (CeOx), and nickel oxide (NiOx). Therefore, this research provides efficient guidelines for the fabrication of eco-friendly high-performance CsBi3I10-based PSCs.

引用

页码：54 / 63

页数：10

共 58 条

[1] Role of a Solution-Processed V2O5 Hole Extracting Layer on the Performance of CuO-ZnO-Based Solar Cells [J].