Enhanced performance of perovskite solar cells using p-type doped PFB:F4TCNQ composite as hole transport layer

被引:19
作者
Elawad, Mohammed [1 ,2 ]
Sun, Licheng [1 ,3 ]
Mola, Genene Tessema [4 ]
Yu, Ze [1 ]
Arbab, Elhadi Abdalla A. [2 ,4 ]
机构
[1] Dalian Univ Technol, DUT KTH Joint Educ & Res Ctr Mol Devices, Inst Artificial Photosynthesis, State Key Lab Fine Chem, Dalian 116024, Peoples R China
[2] Omdurman Islamic Univ, Fac Sci & Technol, Omdurman POB 382, Omdurman, Sudan
[3] KTH Royal Inst Technol, Sch Chem Sci & Engn, Dept Chem, S-10044 Stockholm, Sweden
[4] Univ KwaZulu Natal, Sch Chem & Phys, Pietermaritzburg Campus,Private Bag X01, ZA-3209 Scottsville, South Africa
基金
中国国家自然科学基金;
关键词
Perovskite; Solar cell; P-type PFB; Hole transport material; Device stability; CHARGE EXTRACTION; LOW-COST; EFFICIENT; CONDUCTOR; DOPANTS;
D O I
10.1016/j.jallcom.2018.08.025
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Conjugated polymers have been widely used as hole transport materials (HTM) in the preparation of mesoscopic perovskite solar cells (PSCs). In this work, we employed p-type doped conducting polymer known as poly(9,9-dioctylfluorene-co-bis-N,N-(-4-butyl phenyl)-bis-N,N-phenyl-1,4-phenylenediamine) (PFB) as a hole transport material (HTM) in perovskite based solar cell. The effect of dopant concentration on the optical and electrical properties of PEB was investigated to optimize the electrical properties of the material for the best function of the solar cell. The highest power conversion efficiency of mesoscopic perovskite solar cells (PSCs), fabricated in this investigation, was found to be 14.04% which is 57% higher than that of pristine PFB hole transport layer. The UV-Vis absorption and Raman spectroscopy measurements confirm the occurrence of oxidation in a p-type doped PFB hole transport layer. This is attributed to the transfer of electrons from the highest occupied molecular orbital (HOMO) of PEB to the lowest unoccupied molecular orbital (LUMO) of F4TCNQ. The solar cells produced using p-type doped PFB: F4TCNQ composite not only improves device performances but also shows superior long-term stability. The optical, morphological and electrical properties of the doped composite PFB: F4TCNQ and newly fabricated devices are presented and discussed in this paper. (C) 2018 Published by Elsevier B.V.
引用
收藏
页码:25 / 32
页数:8
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