Towards an optical switching of memory effect in Au/TiO2/ITO/ZnO:Al/p-Si heterostructure based on nanoparticles

被引：12
|
作者：
Nouiri, M. [1 ]
Djessas, K. [2 ]
El Mir, L. [1 ,3 ]
机构：
[1] Gabes Univ, Fac Sci Gabes, Lab Phys Mat & Nanomat Appl Environm LaPhyMNE, Gabes, Tunisia
[2] Univ Perpignan, Lab Proc Mat & Energie Solaire, PROMES CNRS, Rambla Thermodynam, F-66100 Perpignan, France
[3] Al Imam Mohammad Ibn Saud Islamic Univ IMSIU, Dept Phys, Coll Sci, Riyadh 11623, Saudi Arabia
来源：
APPLIED NANOSCIENCE | 2018年 / 8卷 / 08期
关键词：
Sol-gel; Resistive switching; Memory effect; Nanoparticles; RESISTANCE; AL; MECHANISMS;
D O I：
10.1007/s13204-018-0864-z
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We have successfully realized a nonvolatile resistive memory structure by rf-magnetron sputtering technique using nanoparticles synthesized by sol-gel method. The resistive switching (RS) related to the Au/TiO2 Schottky contact was grafted on a photosensitive structure ITO/ZnO:Al/p-Si allowing memory effect switching optically activated. The RS takes place via tunneling path through potential barrier located at the Au/TiO2 interface. The memory effect persists under illumination and the Arrhenius plot of the surface of the V-I cycle shows an activation energy of about 160meV in dark and 100meV under visible illumination. This behavior of the RS optically activated is closely related to the electronic states in the Au/TiO2 interface which leads to perform an optical switching of the memory effect with the presented structure.
引用
收藏
页码：2001 / 2007
页数：7
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