Type-II base-collector performance advantages and limitations in high-speed NpN double heterojunction bipolar transistors (DHBTs)

被引：0
|
作者：
Bolognesi, CR
Dvorak, MW
Watkins, SP
机构：
[1] Simon Fraser Univ, Burnaby, BC V5A 1S6, Canada
[2] Agilent Technol, Santa Rosa, CA 95403 USA
来源：
IEICE TRANSACTIONS ON ELECTRONICS | 2003年 / E86C卷 / 10期
关键词：
heterostructure bipolar transistors; type-II lineup; staggered band alignment; high-speed digital circuits;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We study the advantages and limitations of InP/GaAsSb/InP DHBTs for high-speed digital circuit applications. We show that the high-current performance limitation in these devices is electrostatic in nature. Comparison of the location of collector current blocking in various collector designs suggests a smoother, more gradual onset of blocking effects in type-II collectors. A comparison of collector current blocking effects between InP/GaAsSb-based and various designs of InP/GaInAs-based DHBTs provides support for our analysis.
引用
收藏
页码：1929 / 1934
页数：6
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