On the identification of Sb2Se3 using Raman scattering

被引：89
作者：
Shongaiova, A. [1 ,2 ,3 ]
Correia, M. R. [1 ,2 ]
Vermang, B. [4 ,5 ,6 ]
Cunha, J. M., V [7 ]
Salome, P. M. P. [1 ,7 ]
Fernandes, P. A. [1 ,2 ,7 ,8 ]
机构：
[1] Univ Aveiro, Dept Fis, P-3810193 Aveiro, Portugal
[2] Univ Aveiro, I3N, P-3810193 Aveiro, Portugal
[3] Satpayev Univ, Satpayev St 22a, Almaty City 050013, Kazakhstan
[4] Univ Hasselt Partner Solliance, Agoralaan Gebouw H, B-3590 Diepenbeek, Belgium
[5] Imec Partner Solliance, Kapeldreef 75, B-3001 Leuven, Belgium
[6] Imomec Partner Solliance, Wetenschapspk 1, B-3590 Diepenbeek, Belgium
[7] Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal
[8] Inst Politecn Porto, Dept Fis, CIETI, Inst Super Engn Porto, Rua Dr Antonio Bernardino de Almeida 431, P-4200072 Porto, Portugal
来源：
MRS COMMUNICATIONS | 2018年 / 8卷 / 03期
基金：
欧洲研究理事会;
关键词：
ANION CHEMICAL-COMPOSITION; THIN-FILM; ANODE;
D O I：
10.1557/mrc.2018.94
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Robust evidences are presented showing that the Raman mode around 250 cm(-1) in the Sb2Se3 thin films does not belong to this binary compound. The laser power density dependence of the Raman spectrum revealed the formation of Sb2O3 for high values of laser intensity power density excitation under normal atmospheric conditions. To complement this study, the Sb2Se3 films were characterized by x-ray diffraction during in situ annealing. Both these measurements showed that the Sb2Se3 compound can be replaced by Sb2O3. A heat-assisted chemical process explains these findings. Furthermore, Raman conditions required to perform precise measurements are described.
引用
收藏
页码：865 / 870
页数：6
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