Two-step growth of ZnO filins on silicon by atomic layer deposition

被引：38
作者：
Lee, S
Im, YH
Hahn, YB [1 ]
机构：
[1] Chonbuk Natl Univ, Sch Chem Engn & Technol, Chonju 561756, South Korea
[2] Chonbuk Natl Univ, Nano Mat Res Ctr, Chonju 561756, South Korea
来源：
KOREAN JOURNAL OF CHEMICAL ENGINEERING | 2005年 / 22卷 / 02期
关键词：
ZnO; two-step growth; buffer layer; atomic layer deposition; Si substrate;
D O I：
10.1007/BF02701506
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Two-step growth of ZnO by atomic layer deposition at low temperatures was performed to grow quality ZnO films on silicon substrates: first, the growth of a buffer layer at 130 degrees C and second, the growth of the main layer at 210 degrees C. Structural and optical properties of the ZnO films deposited on ZnO-buffer/Si(111) were investigated as a function of buffer layer thickness. The films showed a strong UV emission at 380 nm and a weak green emission at 520-570 nm. The ZnO films deposited on a 327 angstrom buffer layer showed overall the best surface morphology and structural and optical properties.
引用
收藏
页码：334 / 338
页数：5
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