Two-step growth of ZnO filins on silicon by atomic layer deposition

被引：38

作者：

Lee, S

Im, YH

Hahn, YB ^{[1
]}

机构：

[1] Chonbuk Natl Univ, Sch Chem Engn & Technol, Chonju 561756, South Korea

[2] Chonbuk Natl Univ, Nano Mat Res Ctr, Chonju 561756, South Korea

来源：

KOREAN JOURNAL OF CHEMICAL ENGINEERING | 2005年 / 22卷 / 02期

关键词：

ZnO; two-step growth; buffer layer; atomic layer deposition; Si substrate;

D O I：

10.1007/BF02701506

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Two-step growth of ZnO by atomic layer deposition at low temperatures was performed to grow quality ZnO films on silicon substrates: first, the growth of a buffer layer at 130 degrees C and second, the growth of the main layer at 210 degrees C. Structural and optical properties of the ZnO films deposited on ZnO-buffer/Si(111) were investigated as a function of buffer layer thickness. The films showed a strong UV emission at 380 nm and a weak green emission at 520-570 nm. The ZnO films deposited on a 327 angstrom buffer layer showed overall the best surface morphology and structural and optical properties.

引用

页码：334 / 338

页数：5

共 22 条

[21] The growth and annealing of single crystalline ZnO films by low-pressure MOCVD [J].