Two-step growth of ZnO filins on silicon by atomic layer deposition

被引：38

作者：

Lee, S

Im, YH

Hahn, YB ^{[1
]}

机构：

[1] Chonbuk Natl Univ, Sch Chem Engn & Technol, Chonju 561756, South Korea

[2] Chonbuk Natl Univ, Nano Mat Res Ctr, Chonju 561756, South Korea

来源：

KOREAN JOURNAL OF CHEMICAL ENGINEERING | 2005年 / 22卷 / 02期

关键词：

ZnO; two-step growth; buffer layer; atomic layer deposition; Si substrate;

D O I：

10.1007/BF02701506

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Two-step growth of ZnO by atomic layer deposition at low temperatures was performed to grow quality ZnO films on silicon substrates: first, the growth of a buffer layer at 130 degrees C and second, the growth of the main layer at 210 degrees C. Structural and optical properties of the ZnO films deposited on ZnO-buffer/Si(111) were investigated as a function of buffer layer thickness. The films showed a strong UV emission at 380 nm and a weak green emission at 520-570 nm. The ZnO films deposited on a 327 angstrom buffer layer showed overall the best surface morphology and structural and optical properties.

引用

收藏

页码：334 / 338

页数：5

相关论文

共 22 条

[1] Role of ZnS buffer layers in growth of zincblende ZnO on GaAs substrates by metalorganic molecular-beam epitaxy [J].

Ashrafi, AA ;

Ueta, A ;

Kumano, H ;

Suemune, I .

JOURNAL OF CRYSTAL GROWTH, 2000, 221 :435-439

[2]

Bang KH, 2003, APPL SURF SCI, V207, P359, DOI 10.1016/S0169-4332(02)00005-9

[3] Layer-by-layer growth of ZnO epilayer on Al2O3(0001) by using a MgO buffer layer [J].

Chen, YF ;

Ko, HJ ;

Hong, SK ;

Yao, T .

APPLIED PHYSICS LETTERS, 2000, 76 (05) :559-561

[4] Influences of initial nitridation and buffer layer deposition on the morphology of a (0001) GaN layer grown on sapphire substrates [J].

Fuke, S ;

Teshigawara, H ;

Kuwahara, K ;

Takano, Y ;

Ito, T ;

Yanagihara, M ;

Ohtsuka, K .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (02) :764-767

[5]

HIRAMATSU K, 1991, J CRYST GROWTH, V98, P209

[6] Quality improvement of ZnO layer on LT-grown ZnO layer/Si(111) through a two-step growth using an RF magnetron sputtering [J].

Jeong, SH ;

Kim, SI ;

Kim, JK ;

Lee, BT .

JOURNAL OF CRYSTAL GROWTH, 2004, 264 (1-3) :327-333

[7] Homo-buffer layer effects and single crystalline ZnO hetero-epitaxy on c-plane sapphire by a conventional RF magnetron sputtering [J].

Jeong, SH ;

Kim, IS ;

Kim, SS ;

Kim, JK ;

Lee, BT .

JOURNAL OF CRYSTAL GROWTH, 2004, 264 (1-3) :110-115

[8] Growth mechanism of needle-shaped ZnO nanostructures over NiO-coated Si substrates [J].

Kim, TY ;

Lee, SH ;

Mo, YH ;

Nahm, KS ;

Kim, JY ;

Suh, EK ;

Kim, M .

KOREAN JOURNAL OF CHEMICAL ENGINEERING, 2004, 21 (03) :733-738

[9] Investigation of ZnO epilayers grown under various Zn/O ratios by plasma-assisted molecular-beam epitaxy [J].

Ko, HJ ;

Yao, T ;

Chen, YF ;

Hong, SK .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (08) :4354-4360

[10] Growth of high quality ZnO thin films at low temperature on Si(100) substrates by plasma enhanced chemical vapor deposition [J].

Li, BS ;

Liu, YC ;

Shen, DZ ;

Lu, YM ;

Zhang, JY ;

Kong, XG ;

Fan, XW ;

Zhi, ZZ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2002, 20 (01) :265-269