The effects of low temperature buffer layer on the growth of pure Ge on Si(001)

被引：27

作者：

Shin, Keun Wook ^{[2
]}

Kim, Hyun-Woo ^{[2
]}

Kim, Jungsub ^{[2
]}

Yang, Changjae ^{[2
]}

Lee, Sangsoo ^{[2
]}

Yoon, Euijoon ^{[1
,2
]}

机构：

[1] Seoul Natl Univ, Dept Nano Sci & Technol, Grad Sch Convergence Sci & Technol, Suwon 433270, South Korea

[2] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea

来源：

THIN SOLID FILMS | 2010年 / 518卷 / 22期

关键词：

Germanium; UHVCVD; Two step growth; Thickness; Low temperature; THREADING-DISLOCATION DENSITIES; CHEMICAL-VAPOR-DEPOSITION; EPITAXIAL LAYERS; ULTRAHIGH-VACUUM; SI; FILMS;

D O I：

10.1016/j.tsf.2010.03.148

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigated the effects of low temperature (LT) Ge buffer layers on the two-step Ge growth by varying the thickness of buffer layers. Whereas the two-step Ge layers using thin (<40 nm) Ge buffer layers were roughened due to the formation of SiGe alloy, pure and flat Ge layers were grown by using thick (>50 nm) LT Ge buffer layers. The lowest threading dislocation density of 1.2 x 10(6) cm(-2) was obtained when 80-nm-thick LT Ge buffer layer was used. We concluded that the minimum thickness of buffer layer was required to grow uniform two-step Ge layers on Si and its quality was subject to the thickness of buffer layer. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：6496 / 6499

页数：4

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