FEATURES OF RADIATION CHANGES IN ELECTRICAL PROPERTIES OF INAlN/GAN HEMTS

被引：0
|
作者：
Afonin, A. G. [1 ]
Brudnyi, V. N. [1 ]
Brudnyi, P. A. [1 ]
Velikovskii, L. E. [1 ]
机构：
[1] Natl Res Tomsk State Univ, Tomsk, Russia
来源：
RUSSIAN PHYSICS JOURNAL | 2020年 / 62卷 / 09期
关键词：
InAlN/GaN high electron mobility transistor; radiation resistance; charge neutrality level; FERMI-LEVEL; N-GAN; ELECTRONIC-PROPERTIES; CHARGE-NEUTRALITY; DEEP LEVELS; IRRADIATION; DEFECT; TRAPS; MODEL; ALN;
D O I：
10.1007/s11182-020-01888-w
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The effect of the proton, electron, gamma - rays, and fast neutron irradiation on the parameters of InAlN/GaN HEMT structures is analyzed. The features of initial electronic properties of the InAlN and AlGaN barrier layers with a change in their composition, as well as the change in these properties when exposed to high-energy radiation are considered with taking into account the compositional dependence of the charge neutrality level energy position in the energy spectrum of these barrier layers.
引用
收藏
页码：1656 / 1662
页数：7
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