Directional Exciton-Energy Transport in a Lateral Heteromonolayer of WSe2-MoSe2

被引：24

作者：

Shimasaki, Masafumi ^{[1
]}

Nishihara, Taishi ^{[1
]}

Matsuda, Kazunari ^{[1
]}

Endo, Takahiko ^{[2
]}

Takaguchi, Yuhei ^{[2
]}

Liu, Zheng ^{[3
]}

Miyata, Yasumitsu ^{[2
]}

Miyauchi, Yuhei ^{[1
]}

机构：

[1] Kyoto Univ, Inst Adv Energy, Kyoto 6110011, Japan

[2] Tokyo Metropolitan Univ, Dept Phys, Tokyo 1920397, Japan

[3] Natl Inst Adv Ind Sci & Technol, Innovat Funct Mat Res Inst, Nagoya, Aichi 4638560, Japan

来源：

ACS NANO | 2022年 / 16卷 / 05期

关键词：

transition metal dichalcogenides; exciton; energy transport; excitonic device; lateral heterostructure; INPLANE HETEROSTRUCTURES; VALLEY POLARIZATION; EPITAXIAL-GROWTH; SINGLE-LAYER; MONOLAYER; MOS2; DYNAMICS;

D O I：

10.1021/acsnano.2c01890

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Controlling the direction of exciton-energy flow in two-dimensional (2D) semiconductors is crucial for developing future high-speed optoelectronic devices using excitons as the information carriers. However, intrinsic exciton diffusion in conventional 2D semiconductors is omnidirectional, and efficient exciton-energy transport in a specific direction is difficult to achieve. Here we demonstrate directional exciton-energy transport across the interface in tungsten diselenide (WSe2)-molybdenum diselenide (MoSe2) lateral heterostructures. Unidirectional transport is spontaneously driven by the built-in asymmetry of the exciton-energy landscape with respect to the heterojunction interface. At excitation positions close to the interface, the exciton photoluminescence (PL) intensity was substantially decreased in the WSe2 region and enhanced in the MoSe2 region. In PL excitation spectroscopy, it was confirmed that the observed phenomenon arises from lateral exciton-energy transport from WSe2 to MoSe2. This directional exciton-energy flow in lateral 2D heterostructures can be exploited in future optoelectronic devices.

引用

页码：8205 / 8212

页数：8

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