Local environment of ferromagnetically ordered Mn in epitaxial InMnAs

被引:16
作者
Chiu, PT [1 ]
Wessels, BW
Keavney, DJ
Freeland, JW
机构
[1] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA
[2] Northwestern Univ, Ctr Mat Res, Evanston, IL 60208 USA
[3] Argonne Natl Lab, Adv Photon Source, Argonne, IL 60439 USA
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.1855427
中图分类号
O59 [应用物理学];
学科分类号
摘要
The magnetic properties of the ferromagnetic semiconductor In0.98Mn0.02As were characterized by x-ray absorption spectroscopy and x-ray magnetic circular dichroism. The Mn exhibits an atomic-like L-2,L-3 absorption spectrum that indicates that the 3d states are highly localized. In addition, a large dichroism at the Mn L-2,L-3 edge was observed from 5 to 300K at an applied field of 2T. A calculated spectrum assuming atomic Mn2+ yields the best agreement with the experimental InMnAs spectrum. A comparison of the dichroism spectra of MnAs and InMnAs shows clear differences suggesting that the ferromagnetism observed in InMnAs is not due to hexagonal MnAs clusters. The temperature dependence of the dichroism indicates the presence of two ferromagnetic species, one with a transition temperature of 30 K and another with a transition temperature in excess of 300 K. The dichroism spectra are consistent with the assignment of the low temperature species to random substitutional Mn and the high temperature species to Mn near-neighbor pairs. (C) 2005 American Institute of Physics.
引用
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页码:1 / 3
页数:3
相关论文
共 19 条
[11]   Magnetic moment of Mn in the ferromagnetic semiconductor (Ga0.98Mn0.02)As [J].
Ohldag, H ;
Solinus, V ;
Hillebrecht, FU ;
Goedkoop, JB ;
Finazzi, M ;
Matsukura, F ;
Ohno, H .
APPLIED PHYSICS LETTERS, 2000, 76 (20) :2928-2930
[12]   NEW III-V-DILUTED MAGNETIC SEMICONDUCTORS [J].
OHNO, H ;
MUNEKATA, H ;
VONMOLNAR, S ;
CHANG, LL .
JOURNAL OF APPLIED PHYSICS, 1991, 69 (08) :6103-6108
[13]   Core-level photoemission study of Ga1-xMnxAs [J].
Okabayashi, J ;
Kimura, A ;
Rader, O ;
Mizokawa, T ;
Fujimori, A .
PHYSICAL REVIEW B, 1998, 58 (08) :R4211-R4214
[14]   Device physics - Magnetoelectronics [J].
Prinz, GA .
SCIENCE, 1998, 282 (5394) :1660-1663
[15]   III-V diluted magnetic semiconductor: Substitutional doping of Mn in InAs [J].
Soo, YL ;
Huang, SW ;
Ming, ZH ;
Kao, YH ;
Munekata, H ;
Chang, LL .
PHYSICAL REVIEW B, 1996, 53 (08) :4905-4909
[16]   Local environment surrounding ferromagnetically ordered Mn in Mn/GaAs digital alloys and (Mn, Ga)As random alloys [J].
Soo, YL ;
Kioseoglou, G ;
Kim, S ;
Chen, X ;
Luo, H ;
Kao, YH ;
Lin, HJ ;
Hsieh, HH ;
Hou, TY ;
Chen, CT ;
Sasaki, Y ;
Liu, X ;
Furdyna, JK .
PHYSICAL REVIEW B, 2003, 67 (21)
[17]   Local structure around Mn atoms in room-temperature ferromagnetic (In,Mn)As thin films probed by extended x-ray absorption fine structure [J].
Soo, YL ;
Kim, S ;
Kao, YH ;
Blattner, AJ ;
Wessels, BW ;
Khalid, S ;
Sanchez Hanke, C ;
Kao, CC .
APPLIED PHYSICS LETTERS, 2004, 84 (04) :481-483
[18]   STRONG MAGNETIC-X-RAY DICHROISM IN 2P ABSORPTION-SPECTRA OF 3D TRANSITION-METAL IONS [J].
VANDERLAAN, G ;
THOLE, BT .
PHYSICAL REVIEW B, 1991, 43 (16) :13401-13411
[19]   THE 2P ABSORPTION-SPECTRA OF 3D TRANSITION-METAL COMPOUNDS IN TETRAHEDRAL AND OCTAHEDRAL SYMMETRY [J].
VANDERLAAN, G ;
KIRKMAN, IW .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1992, 4 (16) :4189-4204