Direct observation of copper depletion and potential changes at copper indium gallium diselenide grain boundaries

被引：115
作者：
Hetzer, MJ
Strzhemechny, YM
Gao, M
Contreras, MA
Zunger, A
Brillson, LJ
机构：
[1] Ohio State Univ, Dept Phys, Columbus, OH 43210 USA
[2] Ohio State Univ, Dept Elect & Comp Engn, Mat Res Ctr, Columbus, OH 43210 USA
[3] Natl Renewable Energy Lab, Golden, CO 80401 USA
来源：
APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 16期
关键词：
D O I：
10.1063/1.1906331
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have used micro-Auger electron spectroscopy, cathodoluminescence spectroscopy, and work function measurements in copper indium gallium diselenide polycrystalline solar cell films cleaved in ultrahigh vacuum. We establish that, relative to the grain interior, the grain boundary shows (1) a Cu composition decrease, as large as a factor of two, (2) a work function decrease of up to 480 meV, and (3) no additional radiative recombination centers despite a high concentration of grain boundary (GB) defects. These results confirm theoretical predictions that (i) polar GB interfaces are stabilized by massive (similar to 50%) removal of Cu atoms, leading to (ii) a valence band offset between GB and grain interiors that (iii) repels holes from the GB, thus likely reducing GB electron-hole recombination and improving photovoltaic (and other photonic) device operation. (c) 2005 American Institute of Physics.
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页码：1 / 3
页数：3
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