Landau Quantization of Topological Surface States in Bi2Se3

被引：339

作者：

Cheng, Peng ^{[1
]}

Song, Canli ^{[1
]}

Zhang, Tong ^{[1
,2
]}

Zhang, Yanyi ^{[1
]}

Wang, Yilin ^{[2
]}

Jia, Jin-Feng ^{[1
]}

Wang, Jing ^{[1
]}

Wang, Yayu ^{[1
]}

Zhu, Bang-Fen ^{[1
]}

Chen, Xi ^{[1
]}

Ma, Xucun ^{[2
]}

He, Ke ^{[2
]}

Wang, Lili ^{[2
]}

Dai, Xi ^{[2
]}

Fang, Zhong ^{[2
]}

Xie, Xincheng ^{[2
]}

Qi, Xiao-Liang ^{[3
,4
]}

Liu, Chao-Xing ^{[4
,5
]}

Zhang, Shou-Cheng ^{[4
]}

Xue, Qi-Kun ^{[1
,2
]}

机构：

[1] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China

[2] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China

[3] Univ Calif Santa Barbara, Stn Q, Santa Barbara, CA 93106 USA

[4] Stanford Univ, Dept Phys, Stanford, CA 94305 USA

[5] Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany

来源：

PHYSICAL REVIEW LETTERS | 2010年 / 105卷 / 07期

关键词：

SINGLE DIRAC CONE; INSULATOR; BI2TE3;

D O I：

10.1103/PhysRevLett.105.076801

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report the direct observation of Landau quantization in Bi2Se3 thin films by using a low-temperature scanning tunneling microscope. In particular, we discovered the zeroth Landau level, which is predicted to give rise to the half-quantized Hall effect for the topological surface states. The existence of the discrete Landau levels (LLs) and the suppression of LLs by surface impurities strongly support the 2D nature of the topological states. These observations may eventually lead to the realization of quantum Hall effect in topological insulators.

引用

页数：4

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