Design of a highly efficient FeS2-based dual-heterojunction thin film solar cell

This article demonstrates a highly efficient FeS2-based n-ZnSe/p-FeS2/p(+)-AlxGa1-xSb dual-heterojunction thin film solar cell using SCAPS-1D simulator. The study has been carried out taking the physical parameters from the literature. The influence of thickness, doping, and defect concentration of ZnSe, FeS2, and AlxGa1-xSb layers on the photovoltaic performance of the solar cell has been investigated in details. The power conversion efficiency (PCE) of the n-ZnSe/p-FeS2 single-heterojunction solar cell is similar to 23.22% with J(SC) = 47.52 mA/cm(2), V-OC = 0.59 V, and FF = 82.62%, respectively. The PCE of the solar cell further increases to similar to 36.75% with J(SC) = 48.13 mA/cm(2), V-OC = 0.94 V, and FF = 80.75%, respectively with the insertion of AlxGa1-xSb back surface field (BSF) layer. This increase in PCE is mainly due to the enhancement of V-OC which is resulted from the suitable band alignment of the dual-heterojunction devices. These results indicate that FeS2-based dual-heterojunction thin film solar cell with ZnSe and AlxGa1-xSb window and BSF layers, respectively, is a potential candidate to fabricate high efficiency thin film solar cell for harvesting solar energy in the future.