Modelling power Schottky diodes

被引：0
|
作者：
Zarebski, Janusz [1 ]
Dabrowski, Jacek [1 ]
机构：
[1] Gdynia Maritime Univ, Dept Marine Elect, PL-81225 Gdynia, Poland
来源：
TCSET 2006: MODERN PROBLEMS OF RADIO ENGINEERING, TELECOMMUNICATIONS AND COMPUTER SCIENCE, PROCEEDINGS | 2006年
关键词：
Schottky barrier diode (SBD); modelling; self-heating; spice;
D O I：
暂无
中图分类号：
TP301 [理论、方法];
学科分类号：
081202 ;
摘要：
This paper is concerned with modelling of silicon and silicon carbide power Schottky diodes. The SPICE built-in isothermal model of silicon diodes and the electrothermal macromodel of silicon carbide Schottky diodes proposed by Infineon Technologies are investigated and modified. The quality of Schottky diodes modelling is estimated by measurements.
引用
收藏
页码：90 / 93
页数：4
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