Two-dimensional model for investigating body contact structures in PD SOI MOSFETs

A two-dimensional (2-D) model for investigating body tied to source (BTS) contacts in PD SOI MOSFETs is presented. The model simulates a 2-D cross-section parallel to the gate in a region close to back oxide of BTS PD SOI MOSFET. Optical generation was used in the simulation program to describe the hole generation via impact ionization and thermal generation. By using this method, holes in the depletion region at the body-drain junction was introduced into the neutral body region and accounts for the different hole generation rates in the active and inactive parts of the BTS PD SOI MOSFET. The model is used for simulating three different body contact structures. Simulations using the model confirms reduction in floating body voltage by using body contacts and shows that narrow body contacts are as effective as wide body contacts. (C) 2003 Elsevier B.V. All rights reserved.