Hydride vapor phase epitaxial growth of thick GaN layers with improved surface flatness

被引：8

作者：

Habel, F ^{[1
]}

Brückner, P ^{[1
]}

Tsay, JD ^{[1
]}

Liu, WY ^{[1
]}

Scholz, F ^{[1
]}

Schmitz, DT ^{[1
]}

Alam, A ^{[1
]}

Heuken, M ^{[1
]}

机构：

[1] Univ Ulm, Dept Optoelect, D-89081 Ulm, Germany

来源：

Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 7 | 2005年 / 2卷 / 07期

关键词：

D O I：

10.1002/pssc.200461459

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Thick GaN layers have been grown by hydride vapor phase epitaxy (HVPE) on different GaN templates grown by metalorganic vapor phase epitaxy. Crack formation could be reduced by using a hydrogen/nitrogen carrier gas mixture. We found strongly different HVPE layer quality when templates grown by different groups have been used, although these templates showed very much the same basic properties. Over 100 tin thick crack-free HVPE layers with extremely flat surface could be grown on optimized templates. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinbeim.

引用

页码：2049 / 2052

页数：4

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