Fully silicided Ni1-xPtxSi metal gate electrode for p-MOSFETs

被引：10

作者：

Lee, RTP ^{[1
]}

Liew, SL ^{[1
]}

Wang, WD ^{[1
]}

Chua, EKC ^{[1
]}

Chow, SY ^{[1
]}

Lai, MY ^{[1
]}

Chi, DZ ^{[1
]}

机构：

[1] Inst Mat Res & Engn, Singapore 117602, Singapore

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2005年 / 8卷 / 07期

关键词：

D O I：

10.1149/1.1925068

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We investigated Ni1- xPtxSi (x = 0.05-0.33) as a metal gate electrode for p-metal oxide semiconductor field effect transistors (MOSFETs). Our results showed that, with a proper atomic composition of Ni1- xPtxSi, the work function of the gate electrode can be tuned from similar to 4.59 eV (for NiSi) to similar to 5.21 eV (for Ni0.67Pt0.33Si). Negligible variations in both the extracted flatband voltages and gate oxide thicknesses with processing temperature (up to 900 degrees C) demonstrated the excellent thermal stability of the Ni0.67Pt0.33Si-SiO2 gate stacks. High-resolution transmission electron microscopy also showed no evidence of degradation at the Ni0.67Pt0.33Si-SiO2 interface and the formation Ni and/or Pt precipitates at/or beneath the SiO2-Si interface. (c) 2005 The Electrochemical Society. All rights reserved.

引用

页码：G156 / G159

页数：4

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