Influence of nitrogen on the defects and magnetism of ZnO:N thin films

被引：47

作者：

Wu, Ke Yue ^{[1
,2
]}

Fang, Qing Qing ^{[1
,2
]}

Wang, Wei Na ^{[1
,2
]}

Zhou, Chang ^{[1
,2
]}

Huang, Wen Juan ^{[1
,2
]}

Li, Jin Guang ^{[1
,2
]}

Lv, Qing Rong ^{[1
,2
]}

Liu, Yan Mei ^{[1
,2
]}

Zhang, Qi Ping ^{[1
,2
]}

Zhang, Han Ming ^{[1
,2
]}

机构：

[1] Anhui Univ, Sch Phys & Mat Sci, Hefei 230039, Peoples R China

[2] Anhui Univ, Key Lab Optoelect Informat Acquisit & Manipulat, Minist Educ, Hefei 230039, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 108卷 / 06期

关键词：

ferromagnetic materials; II-VI semiconductors; interstitials; nitrogen; photoluminescence; Raman spectra; semiconductor doping; semiconductor thin films; vacancies (crystal); wide band gap semiconductors; zinc compounds;

D O I：

10.1063/1.3468690

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nitrogen (N)-doped ZnO thin films have been deposited on Si (100) substrates by pulsed laser deposition under different N-2 pressures. The optical and magnetic properties of N-doped ZnO films have been studied with photoluminescence, Raman spectroscopy, and vibrating sample magnetometer. Photoluminescence and Raman studies reveal that N-2 pressure affected the defects of N-doped ZnO films. Under 10 Pa N-2 pressure, N substitutes O and forms N-O acceptor. Zn interstitials are main compensating donors. Under higher N-2 pressures, N not only substitutes O but also forms N2O molecules in N-doped ZnO films. Zn antisizes are compensating donors. In additional, Zn vacancies are formed and the concentration increases with increasing N-2 pressure. Magnetic properties of these films show that there are two distinct ferromagnetic mechanisms: the origin of ferromagnetism in the ZnO:N-10 Pa film is Zn interstitial, while Zn vacancy leads to ferromagnetism in the ZnO:N-50 Pa film. (c) 2010 American Institute of Physics. [doi:10.1063/1.3468690]

引用

页数：5

共 33 条

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