Growth of a new ternary BON crystal on Si(100) by plasma-assisted MOCVD and study on the effects of FED gas and growth temperature

被引：3

作者：

Chen, GC

Lee, SB

Boo, JH ^{[1
]}

机构：

[1] Sungkyunkwan Univ, Dept Chem, Suwon 440746, South Korea

[2] Sungkyunkwan Univ, Inst Basic Sci, Suwon 440746, South Korea

来源：

SURFACE REVIEW AND LETTERS | 2003年 / 10卷 / 04期

基金：

新加坡国家研究基金会;

关键词：

BON crystal; plasma-assisted MOCVD; organaborate precursor; silicon substrate;

D O I：

10.1142/S0218625X03005475

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A new ternary BOxNy crystal was grown on Si(100) substrate at 500degreesC by low-frequency (100 kHz) radio-frequency (rf) derived plasma-assisted MOCVD with an organoborate precursor. The as-grown deposits were characterized by SEM, TED, XPS, XRD, AFM and FT-IR. The experimental results showed that BOxNy crystal was apt to be formed at N-rich atmosphere and high temperature. The decrease of hydrogen flux in fed gases was of benefit to form BON crystal structure. The crystal structure of BOxNy was as similar to that of H3BO3 in this study.

引用

页码：629 / 634

页数：6

共 12 条

[1] PREPARATION, PROPERTIES AND APPLICATIONS OF BORON-NITRIDE THIN-FILMS [J].